| PART |
Description |
Maker |
| MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
| UPD431000A-XXX UPD431000AGZ-85L-KJH UPD431000ACZ-X |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
128K X 8 STANDARD SRAM, 85 ns, PDSO32
|
NEC
|
| MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32
128K X 8 EEPROM 12V, 150 ns, PDSO32
128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作）
128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX27L1000 MX27L1000MC-12 MX27L1000MC-15 MX27L1000M |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
TRIM POT 500 OHM 3MM SQUARE SMD
TRIM POT 50K OHM 3MM SQUARE SMD
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| NX29F010-45TI NX29F010-35T NX29F010-35W NX29F010-4 |
1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY
|
List of Unclassifed Manufacturers
|
| IS24C128A-2PLI IS24C128A-2GLI IS24C256A-3WLA3 IS24 |
128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| UPD442012AGY-DD12X-MJH UPD442012AGY-BB70X-MJH UPD4 |
2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
| AT29LV010A-25 ATMELCORP-AT29LV010A-25JI AT29LV010A |
1 Megabit (128K x 8) 3-volt only CMOS flash
High Speed CMOS Logic Dual 2-Bit Bistable Transparent Latches 16-SOIC -55 to 125
|
Atmel Corp.
|
